excelics EPA160B data sheet high efficiency heterojunction power fet +31.0dbm typical output power 5.5db typical power gain at 18ghz 0.3 x 1600 micron recessed mushroom gate si 3 n 4 passivation advanced epitaxial heterojunction profile provides extra high power efficiency, and high reliability idss sorted in 40ma per bin range electrical characteristics (t a = 25 o c) symbols parameters/test conditions min typ max unit p 1db output power at 1db compression f=12ghz vds=8v, ids=50% idss f=18ghz 29.0 31.0 31.0 dbm g 1db gain at 1db compression f=12ghz vds=8v, ids=50% idss f=18ghz 9.0 10.5 5.5 db pae power added efficiency at 1db compression vds=8v, ids=50% idss f=12ghz 45 % idss saturated drain current vds=3v, vgs=0v 290 480 660 ma gm transconductance vds=3v, vgs=0v 320 500 ms vp pinch-off voltage vds=3v, ids=4.5ma -1.0 -2.5 v bvgd drain breakdown voltage igd=1.6ma -11 -15 v bvgs source breakdown voltage igs=1.6ma -7 -14 v rth thermal resistance (au-sn eutectic attach) 33 o c/w maximum ratings at 25 o c symbols parameters absolute 1 continuous 2 vds drain-source voltage 12v 8v vgs gate-source voltage -8v -3v ids drain current idss 435ma igsf forward gate current 80ma 14ma pin input power 28dbm @3db compression tch channel temperature 175 o c 150 o c tstg storage temperature -65/175 o c -65/150 o c pt total power dissipation 4.1w 3.4w note: 1. exceeding any of the above ratings may result in permanent damage. 2. exceeding any of the above ratings may reduce mttf below design goals. excelics semiconductor, inc., 2908 scott blvd., santa clara, ca 95054 phone: (408) 970-8664 fax: (408) 970-8998 web site: www.excelics.com chip thickness: 75 13 microns all dimensions in microns 540 50 156 48 100 370 40 95 50 120 d s g d ss g
EPA160B data sheet high efficiency heterojunction po w er fet s- p arameters 8v, 1/2 idss fr e q --- s 1 1 -- - --- s 2 1 -- - --- s 1 2 -- - --- s 2 2 --- (ghz) m a g a ng m a g a n g m a g a ng m a g a ng 1.0 0.90 2 -115. 3 15.46 8 116. 0 0.02 5 38.1 0.29 8 -138.8 2.0 0.88 4 -146.5 8.67 8 96. 8 0.02 8 27.8 0.34 2 -156.8 3.0 0.88 1 -158.7 5.97 1 86. 9 0.03 0 28.6 0.35 1 -163.1 4.0 0.88 1 -166.4 4.57 9 79. 4 0.03 1 30.7 0.35 9 -165.6 5.0 0.88 0 -172.1 3.70 5 72. 6 0.03 2 35.1 0.36 7 -165.7 6.0 0.87 8 -176.6 3.11 3 66. 5 0.03 4 38.3 0.38 1 -165.8 7.0 0.879 179.0 2.70 3 60. 7 0.03 6 40.0 0.39 6 -164.7 8.0 0.882 174.5 2.37 4 55. 1 0.03 8 41.6 0.41 6 -163.6 9.0 0.881 169.9 2.11 0 49. 6 0.03 8 44.4 0.43 7 -162.9 10.0 0.887 165.5 1.90 0 44. 4 0.04 0 45.0 0.46 1 -161.9 11.0 0.891 160.6 1.71 8 38. 8 0.04 2 45.8 0.49 1 -161.5 12.0 0.898 155.6 1.55 7 33. 2 0.04 4 45.9 0.52 1 -161.7 13.0 0.905 151.0 1.41 1 27. 7 0.04 4 45.4 0.55 4 -162.8 14.0 0.908 146.6 1.27 7 22. 3 0.04 6 43.1 0.58 0 -164.2 15.0 0.910 143.2 1.15 1 17. 2 0.04 7 42.3 0.60 5 -166.4 16.0 0.912 140.2 1.05 1 12. 1 0.04 8 39.5 0.62 6 -168.6 17.0 0.920 137.9 0.95 6 7. 7 0.05 0 37.6 0.64 5 -171.6 18.0 0.934 135.9 0.88 0 3. 0 0.05 2 37.6 0.66 5 -174.5 19.0 0.934 134.4 0.81 0 -1. 7 0.05 4 34.6 0.68 4 -177.7 20.0 0.932 133.9 0.74 2 -5. 7 0.05 7 33.8 0.697 178.4 21.0 0.923 134.3 0.68 4 -8. 6 0.06 0 32.2 0.700 174.7 22.0 0.934 135.0 0.64 1 -11. 5 0.06 3 32.4 0.707 171.7 23.0 0.946 134.6 0.61 6 -14. 3 0.06 8 32.5 0.718 168.7 24.0 0.948 133.8 0.57 9 -17. 7 0.07 2 33.3 0.719 166.0 25.0 0.949 133.0 0.55 8 -20. 0 0.07 9 32.7 0.722 163.7 26.0 0.935 131.3 0.52 7 -22. 3 0.08 4 33.0 0.723 162.4 n o t e : t h e data inc l ud e d 0.7 mi l s diam e t e r a u b o ndin g w i r e s : 2 g at e w ir e s, 15 mi l s e ach; 2 drain w ir e s, 20 mi l s e ach; 6 s o urc e w ir e s, 7 mi l s e ach. p-1db & p a e v s . v d s 25 30 35 40 4 5 6 7 8 d r a i n-sour c e vo l t age (v) p - 1 d b (dbm) 30 35 40 45 50 55 pa e ( % ) f = 12 ghz ids = 5 0 % idss p o ut & p a e v s. pin 0 10 20 30 40 50 0 5 10 15 20 25 pin (dbm) po u t ( d b m ) o r pa e ( % ) f = 12 ghz vds = 8 v , ids = 5 0% idss p a e pout
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